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铁电

na.ferroelectric
网络RAMTRON; Ba,Sr; FRAM

铁电

英-汉网络释义

铁电

RAMTRON

首页-青星-- 淘宝网 ... TM/ 天微 RAMTRON/ 铁电 LITEON/ 光宝 ...

ferroelectric

一、铁电(ferroelectric)、顺电(paraelectric)和反铁电(antiferroelectric)体某些晶体，在居里温度或居里温度以上，其结构有对称 …

Ba,Sr

铁电(Ba,Sr)TiO_3及介电Bi_2O_3-ZnO-Nb_2O

FRAM

铁电(FRAM)存储器是一种特殊工艺的非辉发性的存储器，是采用人工合成的锆钛酸铅(PZT)材料形成存储器结晶体如图三所示 …

ferroelectrics

晶体物理性能第四章铁电与压电物理朱劲松 1 铁电(Ferroelectrics)晶体 ? 在一定温度范围内具有自发极化，而且自发极化的 …

ferroelectric properties

由於钛酸铅系铁电薄膜具有独特的铁电(ferroelectric properties)、压电(piezoelectric properties)及焦电特性(pyroelectric propert...

ferroelectricity

...性内存 ? 磁读电写硬盘多铁性材料 ? 至少拥有铁电(ferroelectricity)、铁磁(ferromagnetism) 或反铁磁(anti-ferromanetism） …

FE

讨论了各类 PZT 基反铁电材料的铁电( FE ) 反铁电( AFE) 相变机理以及其场致应变性能。展望了 PZT基反铁电材料今后研究与 …

例句：

The data -recording device scans a tiny cantilever tip that rides in contact with the surface of a ferroelectric material .

这种数据存储设备使用一个尖顶悬臂对铁电体存储材料进行读写操作。

The crystallization atmosphere was found to be important in determining the crystallization and ferroelectric properties of the BDT films .

结果表明退火气氛对薄膜的微观结构和铁电性能等都有很大的影响。

Recently, many ferroelectric polymers have been synthesized containing crystalline and liquid crystalline polymers .

据此，人们已合成了许多不同类型的铁电聚合物。

Ferroelectric RAM (FRAM) and magnetoresistive RAM (MRAM) are the best-funded and most -evolved of the emerging memory technologies .

铁电 RAM （FRAM ）和磁阻 RAM （MRAM ）是存储器新技术中投入最多、研究最深入的两项技术。

Effect of the bottom electrodes on the capacitors of PYZT ferroelectric thin films .

底电极对 PYZT 铁电薄膜电容器的影响。

The ferroelectric thin films had good crystallization behaviour, excellent dielectric and pyroelectric properties.

该类铁电薄膜具有良好的结晶特性、优异的介电和热释电性能。

Additionally , the mechanism concerning the dependence of ferroelectric properties on domain switching was discussed .

另外，铁电薄膜的铁电性能与电畴翻转的依赖性关系进行了讨论。

Ferroelectric random access memory (FRAM) with a non-volatile, and can read and write as quickly as RAM .

铁电随机存储器（FRAM ）具有非易失性，并且可以象 RAM 一样快速读写。

the effects of the thickness , the interfacial coupling constant and the temperature on the hysteresis of the bilayer are investigated .

我们考察了薄膜厚度、界面耦合强度和温度对铁电双层薄膜电滞回线的影响。

Anomalous photovoltaic effect (APVE) in ferroelectrics and its microcosmic theories are briefly reviewed .

本文简单回顾了铁电体的反常光生伏特效应；

The dielectric and piezoelectric responses of single-domain PT and BT are very sensitive to the phase transition .

铁电薄膜的介电和压电响应对相变非常敏感。

This makes it possible to research the polarization in a ferroelectric substance by HRTEM.

这是利用高分辨成像研究位移型铁电体极化的基础。

BaTiO3 is one of most widely used ferroelectric materials and has been extensively studied .

钛酸钡是应用和研究最多的铁电体之一。

At last, the ionizing radiation mechanisms of the ferroelectric thin films are analyzed in detail .

最后对铁电薄膜的电离辐射机制进行了详细地讨论分析。

In this article , we clarified the possible reasons of the improvement of ferroelectric property and fatigue mechanism in detail . 2.

本文中，我们对其铁电性能改进的原因及其疲劳机制进行了详尽的阐述。

The leakage current was also observed to decrease , which is useful for improving the properties of the thin films .

而漏电流进一步降低，且降幅增大，这对提高铁电薄膜的性能有一定的意义。

Slim -loop-ferroelectric (SLFE) ceramic is a kind of special ferroelectric material . It has potential application in nonlinear capacitor.

细电滞回线材料是一类特殊的铁电材料，在非线性电容器方面有潜在的应用价值。

Through experiment and theory, the progress in research on the ferroelectric critical grain size of BaTiO3 is reviewed in this paper .

本文从实验和理论上对钛酸钡铁电临界尺寸的研究进展进行了综述。

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